SI4682DY-T1-GE3
MOSFET N-CH 30V 16A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4682DY-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for demanding applications. This component features a 30V drain-source voltage and a continuous drain current capability of 16A at 25°C (Tc). The low on-resistance of 9.4mOhm at 16A and 10V Vgs makes it highly efficient for power conversion. With a maximum power dissipation of 2.5W (Ta) or 4.45W (Tc), it is suitable for thermal management in compact designs. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in an 8-SOIC package for surface mounting. Key electrical parameters include a gate charge of 38nC (Max) at 10V Vgs and input capacitance of 1595pF (Max) at 15V Vds. This Vishay Siliconix MOSFET is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 4.45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1595 pF @ 15 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
