SI4682DY-T1-E3
MOSFET N-CH 30V 16A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4682DY-T1-E3, a TrenchFET® series N-Channel Power MOSFET, features a 30V drain-source breakdown voltage and a continuous drain current capability of 16A (Tc) at 25°C. This device exhibits a low on-resistance of 9.4mOhm maximum at 16A and 10V Vgs. With a gate charge of 38nC (max) and input capacitance of 1595pF (max), it offers efficient switching performance. The device is housed in an 8-SOIC package with surface mount capability. Maximum power dissipation is rated at 2.5W (Ta) and 4.45W (Tc). It is suitable for applications in the automotive and industrial sectors demanding robust power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 4.45W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1595 pF @ 15 V |
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