SI4666DY-T1-GE3
MOSFET N-CH 25V 16.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel 25V, 16.5A (Tc) TrenchFET® power MOSFET, part number SI4666DY-T1-GE3. This surface mount device features a low Rds(on) of 10mOhm maximum at 10A and 10V Vgs. It is designed for efficient power switching with a continuous drain current of 16.5A at 25°C case temperature and a maximum power dissipation of 5W (Tc). The device operates with a Vgs range of ±12V and has a gate charge of 34nC at 10V. Applications include power management, load switching, and battery-powered devices across various industrial sectors. It is supplied in an 8-SOIC package on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1145 pF @ 10 V |
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