SI4660DY-T1-GE3
MOSFET N-CH 25V 23.1A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, 25V, 23.1A continuous drain current, TrenchFET® series, part number SI4660DY-T1-GE3. This device features a low on-resistance of 5.8mOhm maximum at 15A and 10V Vgs, with a 4.5V to 10V drive voltage range. It offers 2410pF maximum input capacitance at 15V Vds and 45nC maximum gate charge at 10V Vgs. Power dissipation is rated at 3.1W ambient and 5.6W case temperature. The N-channel MOSFET is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power management and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 5.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 15 V |
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