SI4654DY-T1-GE3
MOSFET N-CH 25V 28.6A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI4654DY-T1-GE3 is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 25V and a continuous drain current (Id) of 28.6A at 25°C (Tc). Its low on-resistance (Rds On) of 4mOhm is achieved at 15A and 10V Vgs. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±16V. Key electrical characteristics include a maximum gate charge (Qg) of 100 nC at 10V and a maximum input capacitance (Ciss) of 3770 pF at 15V. The SI4654DY-T1-GE3 is housed in an 8-SOIC package, suitable for surface mounting, and operates within an extended temperature range of -55°C to 150°C. Maximum power dissipation is rated at 2.5W (Ta) and 5.9W (Tc). This MOSFET is utilized in various industries including automotive, industrial, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 15 V |
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