SI4646DY-T1-GE3
MOSFET N-CH 30V 12A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SI4646DY-T1-GE3 is an N-Channel Power MOSFET from the SkyFET® and TrenchFET® series, designed for efficient power management applications. This component features a 30V drain-to-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc). The device exhibits low on-resistance of 11.5mOhm maximum at 10A and 10V Vgs, facilitated by its advanced MOSFET technology. With a gate charge (Qg) of 45 nC maximum at 10V Vgs and input capacitance (Ciss) of 1790 pF maximum at 15V Vds, it offers optimized switching performance. The SI4646DY-T1-GE3 is packaged in an 8-SOIC surface-mount case, providing 3W of power dissipation at ambient temperature (Ta) and 6.25W at case temperature (Tc). It operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors requiring high-efficiency power switching.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1790 pF @ 15 V |
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