SI4636DY-T1-E3
MOSFET N-CH 30V 17A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4636DY-T1-E3 is an N-Channel MOSFET designed for demanding applications. This 30V device features a low Rds(on) of 8.5mOhm at 10A and 10V Vgs, ensuring efficient power delivery. Its continuous drain current capability is rated at 17A (Tc), with a maximum power dissipation of 4.4W (Tc). The SI4636DY-T1-E3 utilizes a TrenchFET® technology for enhanced performance and is housed in an 8-SOIC package for surface mounting. Key parameters include a gate charge of 60nC (max) at 10V Vgs and an input capacitance of 2635pF (max) at 15V Vds. This component is suitable for use in power management, automotive, and industrial sectors. Operating temperature ranges from -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 4.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2635 pF @ 15 V |
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