SI4628DY-T1-GE3
MOSFET N-CH 30V 38A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4628DY-T1-GE3, an N-Channel MOSFET from the SkyFET® and TrenchFET® series, offers a 30V drain-source voltage and a continuous drain current of 38A at 25°C (Tc). This surface mount component in an 8-SOIC package features a maximum on-resistance of 3mOhm at 20A and 10V. Key electrical parameters include a gate charge (Qg) of 87 nC maximum at 10V and an input capacitance (Ciss) of 3450 pF maximum at 15V. It is designed for operation across a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 3.5W (Ta) and 7.8W (Tc). This device is suitable for applications in power management, industrial, and automotive sectors.
Additional Information
Series: SkyFET®, TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 15 V |
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