SI4621DY-T1-E3
MOSFET P-CH 20V 6.2A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® P-Channel MOSFET, part number SI4621DY-T1-E3, offers a 20V drain-source breakdown voltage and a continuous drain current of 6.2A (Tc) at 25°C. This component features a maximum on-resistance of 54mOhm at 5A and 10V drive. The device is constructed with Metal Oxide technology and includes an isolated Schottky diode for enhanced performance. Designed for surface mounting in an 8-SOIC package, it boasts a maximum power dissipation of 2W (Ta) or 3.1W (Tc). Key electrical parameters include a gate charge of 13nC (Max) at 10V and input capacitance of 450pF (Max) at 10V. It operates across a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V, with a threshold voltage of 3V (Max) at 250µA. This MOSFET is suitable for applications in power management and various industrial systems.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 5A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 10 V |
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