SI4620DY-T1-GE3
MOSFET N-CH 30V 6A/7.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix LITTLE FOOT® SI4620DY-T1-GE3 is an N-channel Power MOSFET designed for efficient power management. This device features a 30V drain-source voltage rating and supports continuous drain currents of 6A at ambient temperature and 7.5A at case temperature. The low on-resistance of 35mOhm at 6A and 10V Vgs makes it suitable for applications requiring minimal conduction losses. It offers a maximum power dissipation of 2W (Ta) and 3.1W (Tc) in its 8-SOIC package. The integrated Schottky diode enhances performance and protection. Key parameters include a gate charge of 13 nC at 10V and input capacitance of 1040 pF at 15V. This MOSFET is commonly utilized in power supply units, battery management systems, and portable electronics. The operating temperature range is -55°C to 150°C.
Additional Information
Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta), 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6A, 10V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 15 V |