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SI4620DY-T1-E3

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SI4620DY-T1-E3

MOSFET N-CH 30V 6A/7.5A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix LITTLE FOOT® SI4620DY-T1-E3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 6A at a typical ambient temperature (Ta) and 7.5A at case temperature (Tc). With a low on-resistance of 35mOhm maximum at 6A and 10V Vgs, it minimizes conduction losses. The MOSFET supports a gate drive voltage range from 4.5V to 10V, with a maximum gate charge (Qg) of 13 nC at 10V. Input capacitance (Ciss) is 1040 pF maximum at 15V Vds. The SI4620DY-T1-E3 is housed in an 8-SOIC package, suitable for surface mounting. It includes an isolated Schottky diode for enhanced performance. Power dissipation is rated at 2W (Ta) and 3.1W (Tc). This component is utilized in various industrial applications, including power management, motor control, and consumer electronics. The operating temperature range is -55°C to 150°C (TJ). This component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: LITTLE FOOT®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs35mOhm @ 6A, 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1040 pF @ 15 V

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