SI4493DY-T1-E3
MOSFET P-CH 20V 10A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4493DY-T1-E3 is a P-Channel Power MOSFET designed for efficient power management. This device features a 20V drain-source voltage rating and a continuous drain current capability of 10A at 25°C (Ta). The low on-resistance of 7.75mOhm at 14A and 4.5V gate drive, coupled with a maximum gate charge of 110 nC @ 4.5 V, ensures high switching efficiency. It operates from a gate-source voltage range of ±12V with a threshold voltage of 1.4V @ 250µA. The MOSFET is housed in a standard 8-SOIC package, suitable for surface mounting. With a maximum power dissipation of 1.5W (Ta) and an operating temperature range of -55°C to 150°C, this component is well-suited for applications in consumer electronics, industrial automation, and battery management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.75mOhm @ 14A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
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