SI4487DY-T1-GE3
MOSFET P-CH 30V 11.6A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4487DY-T1-GE3 is a P-channel TrenchFET® MOSFET designed for efficient power management. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 11.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 20.5mOhm at 10A and 10V Vgs, it offers low conduction losses. The MOSFET operates with gate drive voltages between 4.5V and 10V, and has a maximum gate-source voltage (Vgs) of ±25V. Key parameters include a maximum gate charge (Qg) of 36nC at 10V and an input capacitance (Ciss) of 1075pF at 15V. It supports power dissipation of up to 2.5W (Ta) and 5W (Tc). The SI4487DY-T1-GE3 is supplied in an 8-SOIC package, suitable for surface mounting. This component is utilized in applications such as industrial power supplies and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 20.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1075 pF @ 15 V |
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