SI4486EY-T1-GE3
MOSFET N-CH 100V 5.4A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4486EY-T1-GE3 is a TrenchFET® series N-Channel power MOSFET designed for demanding applications. This surface mount device features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.4 A at 25°C ambient. The low on-resistance of 25 mOhm at 7.9 A and 10 V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 1.8 W (Ta) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for power management, motor control, and power supply circuits across various industrial and automotive sectors. The 8-SOIC package facilitates efficient board assembly. Gate charge (Qg) is a maximum of 44 nC at 10 V, and the maximum gate-source voltage is ±20 V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
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