SI4484EY-T1-GE3
MOSFET N-CH 100V 4.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4484EY-T1-GE3 is an N-Channel TrenchFET® power MOSFET. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 4.8A at 25°C ambient. The device exhibits a maximum Rds(on) of 34mOhm at 6.9A and 10V Vgs. It is available in an 8-SOIC package for surface mounting and operates across a wide temperature range of -55°C to 175°C. The gate charge is specified at a maximum of 30 nC at 10V Vgs. This MOSFET is suitable for applications in industrial and automotive sectors requiring efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
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