SI4484EY-T1-E3
MOSFET N-CH 100V 4.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4484EY-T1-E3 is an N-Channel power MOSFET designed for efficient power switching applications. This device features a 100V drain-source breakdown voltage and a continuous drain current capability of 4.8A at 25°C ambient. The low on-resistance of 34mOhm at 6.9A and 10V drive voltage, coupled with a low gate charge of 30nC at 10V, ensures minimal conduction and switching losses. Packaged in an 8-SOIC (0.154", 3.90mm Width) on tape and reel, it offers a robust operating temperature range from -55°C to 175°C. This component is suitable for use in various industries including industrial automation, consumer electronics, and automotive systems where reliable power management is critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 6.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
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