SI4472DY-T1-GE3
MOSFET N-CH 150V 7.7A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number SI4472DY-T1-GE3. This device offers a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain current (Id) of 7.7 A at 25°C (Tc). It features a low Rds On of 45 mOhm maximum at 5 A and 10 V Vgs. The MOSFET has a gate charge (Qg) of 43 nC maximum at 10 V and input capacitance (Ciss) of 1735 pF maximum at 50 V Vds. It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, suitable for applications requiring efficient power switching. Power dissipation is rated at 3.1 W (Ta) and 5.9 W (Tc). The operating temperature range is -55°C to 150°C. This component is commonly utilized in power supply, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 5.9W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1735 pF @ 50 V |