SI4472DY-T1-E3
MOSFET N-CH 150V 7.7A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number SI4472DY-T1-E3, offers a 150V drain-source voltage rating and continuous drain current capability of 7.7A at 25°C (Tc). This device features a maximum on-resistance of 45mOhm at 5A and 10V gate-source voltage. With a gate charge of 43 nC (max) at 10V and input capacitance of 1735 pF (max) at 50V, it is suitable for applications requiring efficient switching. The MOSFET is housed in an 8-SOIC package with surface mount capability, designed for operation across a temperature range of -55°C to 150°C. Power dissipation is rated at 3.1W (Ta) and 5.9W (Tc). This component finds utility in industrial automation, power supply, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 5.9W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1735 pF @ 50 V |
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