SI4470EY-T1-E3
MOSFET N-CH 60V 9A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI4470EY-T1-E3, features a 60V drain-source breakdown voltage and a continuous drain current of 9A at 25°C ambient. This device boasts a low on-resistance of 11mOhm maximum at 12A and 10V Vgs. The TrenchFET® technology enables efficient power handling with a maximum power dissipation of 1.85W (Ta). Designed for surface mounting in an 8-SOIC package, it operates across a wide temperature range of -55°C to 175°C (TJ). The typical gate charge is 70nC at 10V. This MOSFET is suitable for applications in industrial, automotive, and consumer electronics requiring robust power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.85W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
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