SI4466DY-T1-GE3
MOSFET N-CH 20V 9.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4466DY-T1-GE3 is an N-Channel TrenchFET® power MOSFET with a Drain-to-Source Voltage (Vdss) of 20V. This component offers a continuous drain current (Id) of 9.5A at 25°C and a maximum power dissipation of 1.5W. Key performance characteristics include a low on-resistance (Rds On) of 9mOhm at 13.5A and 4.5V, and a gate charge (Qg) of 60nC at 4.5V. The device supports gate drive voltages from 2.5V to 4.5V and has a maximum Vgs of ±12V. It is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is frequently utilized in industrial and consumer electronics applications requiring efficient power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 13.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
