SI4465ADY-T1-GE3
MOSFET P-CH 8V 8SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4465ADY-T1-GE3 is a P-Channel TrenchFET® power MOSFET. This device features a drain-source breakdown voltage (VDS) of 8V and a continuous drain current (ID) of 13.7A at 25°C ambient temperature, and 20A at 25°C case temperature. With a maximum power dissipation of 3W (ambient) and 6.5W (case), it offers low on-resistance (RDS(on)) of 9mOhm at 14A and 4.5V VGS. The gate threshold voltage (VGS(th)) is 1V maximum at 250µA. It is packaged in an 8-SOIC (0.154", 3.90mm width) surface-mount configuration, supplied on tape and reel. This component is suitable for applications requiring efficient power switching in automotive and industrial systems. The device supports gate drive voltages from 1.8V to 4.5V, with a maximum gate-source voltage of ±8V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 14A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 6.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 4.5 V |
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