SI4465ADY-T1-E3
MOSFET P-CH 8V 8SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4465ADY-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management. This device features a drain-source voltage (Vdss) of 8 V and a continuous drain current capability of 13.7 A at 25°C ambient and 20 A at 25°C case temperature. The low on-resistance is specified at a maximum of 9 mOhm at 14 A and 4.5 V gate-source voltage. Drive voltage characteristics range from 1.8 V to 4.5 V for optimal Rds(on) performance. With a maximum power dissipation of 3 W (ambient) and 6.5 W (case), and a gate charge (Qg) of 85 nC at 4.5 V, this MOSFET is well-suited for high-frequency switching applications. The Vishay Siliconix SI4465ADY-T1-E3 is housed in an 8-SOIC package, suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Applications include power supplies, battery management, and motor control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta), 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 14A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 6.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 8 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 4.5 V |
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