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SI4465ADY-T1-E3

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SI4465ADY-T1-E3

MOSFET P-CH 8V 8SOIC

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI4465ADY-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management. This device features a drain-source voltage (Vdss) of 8 V and a continuous drain current capability of 13.7 A at 25°C ambient and 20 A at 25°C case temperature. The low on-resistance is specified at a maximum of 9 mOhm at 14 A and 4.5 V gate-source voltage. Drive voltage characteristics range from 1.8 V to 4.5 V for optimal Rds(on) performance. With a maximum power dissipation of 3 W (ambient) and 6.5 W (case), and a gate charge (Qg) of 85 nC at 4.5 V, this MOSFET is well-suited for high-frequency switching applications. The Vishay Siliconix SI4465ADY-T1-E3 is housed in an 8-SOIC package, suitable for surface mounting and operates across a temperature range of -55°C to 150°C. Applications include power supplies, battery management, and motor control systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C13.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 14A, 4.5V
FET Feature-
Power Dissipation (Max)3W (Ta), 6.5W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)8 V
Gate Charge (Qg) (Max) @ Vgs85 nC @ 4.5 V

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