SI4463BDY-T1-GE3
MOSFET P-CH 20V 9.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI4463BDY-T1-GE3 is a P-Channel MOSFET designed for demanding applications. This device features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 9.8A at 25°C. The Rds On is specified at a maximum of 11mOhm at 13.7A and 10V Vgs. With a maximum power dissipation of 1.5W (Ta), it is suitable for thermal management in compact designs. The component utilizes advanced TrenchFET technology for low on-resistance and efficient switching performance. It is packaged in an 8-SOIC form factor for surface mounting, operating across a temperature range of -55°C to 150°C. The SI4463BDY-T1-GE3 finds application in power management, battery protection, and load switching circuits across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 13.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V |
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