SI4463BDY-T1-E3
MOSFET P-CH 20V 9.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI4463BDY-T1-E3. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9.8A at 25°C (Ta). The low on-resistance is specified at 11mOhm maximum at 13.7A and 10V gate-source voltage (Vgs). It offers a gate charge (Qg) of 56 nC maximum at 4.5V Vgs and a threshold voltage (Vgs(th)) of 1.4V maximum at 250µA. The MOSFET is housed in an 8-SOIC package (0.154", 3.90mm width) for surface mounting and supports a maximum power dissipation of 1.5W (Ta). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 13.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 4.5 V |
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