SI4462DY-T1-GE3
MOSFET N-CH 200V 1.15A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4462DY-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 1.15A at 25°C. The low on-resistance (Rds(on)) of 480mOhm at 1.5A and 10V gate drive ensures efficient power transfer. With a maximum power dissipation of 1.3W (Ta) and a gate charge (Qg) of 9 nC at 10V, it is suitable for power conversion and management circuits. The device operates across a temperature range of -55°C to 150°C (TJ) and is housed in a compact 8-SOIC package, facilitating surface mounting. This MOSFET is commonly utilized in industrial, automotive, and power supply sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.15A (Ta) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
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