SI4462DY-T1-E3
MOSFET N-CH 200V 1.15A 8-SOICManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4462DY-T1-E3 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain current (Id) of 1.15 A at 25°C ambient. With a low on-resistance (Rds On) of 480 mOhm maximum at 1.5 A and 10 V Vgs, it minimizes conduction losses. The device offers a gate charge (Qg) of 9 nC maximum at 10 V, facilitating efficient switching. Its 8-SOIC package with a 3.90mm width is suitable for surface mounting. This MOSFET is utilized in power management, industrial automation, and consumer electronics sectors. The component is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.15A (Ta) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 1.5A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
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