SI4453DY-T1-E3
MOSFET P-CH 12V 10A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4453DY-T1-E3 is a P-Channel TrenchFET® MOSFET designed for efficient power management. With a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 10A at 25°C, this device offers a maximum on-resistance (Rds On) of 6.5mOhm at 14A and 4.5V Vgs. The device supports gate drive voltages from 1.8V to 4.5V and has a maximum gate charge of 165 nC at 5V. Featuring a low threshold voltage (Vgs(th)) of 900mV at 600µA and a maximum Vgs of ±8V, it is suitable for low-voltage applications. The surface mount 8-SOIC package (0.154" width) allows for a maximum power dissipation of 1.5W. Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in battery management, power supplies, and consumer electronics. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 14A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 600µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 5 V |
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