SI4451DY-T1-GE3
MOSFET P-CH 12V 10A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI4451DY-T1-GE3, offers a 12V drain-source voltage and a continuous drain current of 10A at 25°C. This device features a low on-resistance of 8.25mOhm at 14A and 4.5V Vgs, with a gate charge of 120 nC at 4.5V. The SI4451DY-T1-GE3 supports drive voltages from 1.8V to 4.5V and has a maximum gate-source voltage of ±8V. Operating within a temperature range of -55°C to 150°C, this MOSFET is packaged in an 8-SOIC (0.154" width) and is supplied on tape and reel. It is suitable for applications in power management and automotive sectors. The maximum power dissipation is rated at 1.5W.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.25mOhm @ 14A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 850µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 4.5 V |
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