SI4451DY-T1-E3
MOSFET P-CH 12V 10A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4451DY-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 12 V and a continuous drain current (Id) capability of 10 A at 25°C (Ta), with a maximum power dissipation of 1.5 W (Ta). The device exhibits a low on-resistance (Rds On) of 8.25 mOhm at 14 A and 4.5 V gate drive. Its gate charge (Qg) is specified at a maximum of 120 nC at 4.5 V. The SI4451DY-T1-E3 operates with a gate-source voltage range of ±8 V, and a threshold voltage (Vgs(th)) maximum of 800 mV at 850 µA. It is available in a surface mount 8-SOIC package and is supplied on tape and reel for automated assembly. This MOSFET is suitable for use in power management, battery-powered devices, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.25mOhm @ 14A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 850µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 4.5 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
