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SI4448DY-T1-GE3

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SI4448DY-T1-GE3

MOSFET N-CH 12V 50A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel, part number SI4448DY-T1-GE3, is a high-performance power MOSFET designed for demanding applications. This TrenchFET® series component features a 12V Vdss rating and supports a continuous drain current of 50A (Tc). The low on-resistance of 1.7mOhm at 20A and 4.5V (Vgs) ensures efficient power transfer. It operates with a gate drive range of 1.8V to 4.5V and has a maximum gate charge of 150nC at 4.5V. The device also exhibits a maximum input capacitance (Ciss) of 12350pF at 6V. Fabricated using MOSFET technology, it offers a maximum power dissipation of 3.5W (Ta) and 7.8W (Tc). The SI4448DY-T1-GE3 is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 20A, 4.5V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs150 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds12350 pF @ 6 V

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