SI4448DY-T1-GE3
MOSFET N-CH 12V 50A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel, part number SI4448DY-T1-GE3, is a high-performance power MOSFET designed for demanding applications. This TrenchFET® series component features a 12V Vdss rating and supports a continuous drain current of 50A (Tc). The low on-resistance of 1.7mOhm at 20A and 4.5V (Vgs) ensures efficient power transfer. It operates with a gate drive range of 1.8V to 4.5V and has a maximum gate charge of 150nC at 4.5V. The device also exhibits a maximum input capacitance (Ciss) of 12350pF at 6V. Fabricated using MOSFET technology, it offers a maximum power dissipation of 3.5W (Ta) and 7.8W (Tc). The SI4448DY-T1-GE3 is housed in an 8-SOIC package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 20A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12350 pF @ 6 V |
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