SI4447DY-T1-GE3
MOSFET P-CH 40V 3.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4447DY-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for demanding power management applications. This component features a 40V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 3.3A at 25°C (Ta) with a maximum power dissipation of 1.1W (Ta). The device offers a low on-resistance (Rds On) of 72mOhm maximum at 4.5A and 15V, enabling efficient power switching. It operates with a gate drive voltage range of 10V to 15V for optimal performance. Key electrical characteristics include a maximum gate charge (Qg) of 14 nC at 4.5V and input capacitance (Ciss) of 805 pF at 20V. The SI4447DY-T1-GE3 is housed in an 8-SOIC package for surface mount assembly and operates within an industrial temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in various industries including automotive and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 4.5A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 805 pF @ 20 V |
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