SI4447DY-T1-E3
MOSFET P-CH 40V 3.3A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4447DY-T1-E3 is a P-Channel TrenchFET® Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current (Id) capability of 3.3A at 25°C, with a maximum power dissipation of 1.1W (Ta). The Rds(On) is specified at a maximum of 72mOhm at 4.5A and 15V Vgs, with drive voltages ranging from 10V to 15V for optimal performance. Key parameters include a 14 nC maximum gate charge (Qg) at 4.5V and 805 pF maximum input capacitance (Ciss) at 20V. The device operates across a temperature range of -55°C to 150°C (TJ). The SI4447DY-T1-E3 is housed in a standard 8-SOIC package and is supplied in cut tape (CT) for surface mounting. This MOSFET is commonly utilized in power management, battery charging, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 4.5A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 805 pF @ 20 V |
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