SI4446DY-T1-GE3
MOSFET N-CH 40V 3.9A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4446DY-T1-GE3 is a TrenchFET® N-channel power MOSFET designed for efficient power switching applications. This device features a 40V drain-source breakdown voltage and a continuous drain current rating of 3.9A at 25°C ambient temperature, with a maximum power dissipation of 1.1W (Ta). The Rds(on) is specified at a maximum of 40mOhm at 5.2A and 10V Vgs. Key characteristics include a low gate charge of 12nC at 4.5V Vgs and an input capacitance (Ciss) of 700pF at 20V Vds. It operates with drive voltages between 4.5V and 10V and has a gate-source voltage limit of ±12V. The SI4446DY-T1-GE3 is supplied in an 8-SOIC package suitable for surface mounting and is manufactured using advanced MOSFET technology. This component finds utility in various industrial and consumer electronics sectors, including power management and control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 20 V |
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