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SI4446DY-T1-GE3

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SI4446DY-T1-GE3

MOSFET N-CH 40V 3.9A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI4446DY-T1-GE3 is a TrenchFET® N-channel power MOSFET designed for efficient power switching applications. This device features a 40V drain-source breakdown voltage and a continuous drain current rating of 3.9A at 25°C ambient temperature, with a maximum power dissipation of 1.1W (Ta). The Rds(on) is specified at a maximum of 40mOhm at 5.2A and 10V Vgs. Key characteristics include a low gate charge of 12nC at 4.5V Vgs and an input capacitance (Ciss) of 700pF at 20V Vds. It operates with drive voltages between 4.5V and 10V and has a gate-source voltage limit of ±12V. The SI4446DY-T1-GE3 is supplied in an 8-SOIC package suitable for surface mounting and is manufactured using advanced MOSFET technology. This component finds utility in various industrial and consumer electronics sectors, including power management and control systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Rds On (Max) @ Id, Vgs40mOhm @ 5.2A, 10V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Vgs(th) (Max) @ Id1.6V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 20 V

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