SI4442DY-T1-E3
MOSFET N-CH 30V 15A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix demonstrates advanced power management with the SI4442DY-T1-E3, an N-Channel TrenchFET® MOSFET. This component features a 30V drain-source breakdown voltage and supports a continuous drain current of 15A at 25°C, with a maximum power dissipation of 1.6W. The device exhibits a low on-resistance of 4.5mOhm at 22A and 10V Vgs. Optimized for efficient switching, it offers a gate charge of 50 nC at 4.5V Vgs and operates with a Vgs range of ±12V, featuring a threshold voltage of 1.5V at 250µA Id. The SI4442DY-T1-E3 is housed in an 8-SOIC package and is supplied on tape and reel. Its robust performance makes it suitable for applications in industrial power supplies, automotive systems, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
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