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SI4438DY-T1-GE3

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SI4438DY-T1-GE3

MOSFET N-CH 30V 36A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SI4438DY-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 36A at 25°C (Tc). With a maximum on-resistance (Rds(on)) of 2.7mOhm at 20A and 10V, it minimizes conduction losses. Key electrical parameters include a gate charge (Qg) of 126 nC at 10V and input capacitance (Ciss) of 4645 pF at 15V. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 3.5W (Ta) and 7.8W (Tc). This surface-mount component comes in an 8-SOIC package and operates within a temperature range of -55°C to 150°C (TJ). The SI4438DY-T1-GE3 is suitable for power management, automotive, and industrial applications.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Rds On (Max) @ Id, Vgs2.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id2.6V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4645 pF @ 15 V

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