SI4438DY-T1-GE3
MOSFET N-CH 30V 36A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4438DY-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 36A at 25°C (Tc). With a maximum on-resistance (Rds(on)) of 2.7mOhm at 20A and 10V, it minimizes conduction losses. Key electrical parameters include a gate charge (Qg) of 126 nC at 10V and input capacitance (Ciss) of 4645 pF at 15V. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Power dissipation is rated at 3.5W (Ta) and 7.8W (Tc). This surface-mount component comes in an 8-SOIC package and operates within a temperature range of -55°C to 150°C (TJ). The SI4438DY-T1-GE3 is suitable for power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 7.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 126 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4645 pF @ 15 V |
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