SI4436DY-T1-E3
MOSFET N-CH 60V 8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® N-Channel Power MOSFET, part number SI4436DY-T1-E3, offers 60V drain-to-source voltage and 8A continuous drain current at 25°C case temperature. This MOSFET features a low Rds(on) of 36mOhm maximum at 4.6A and 10V Vgs, enabled by its advanced trench technology. With a gate charge of 32 nC maximum at 10V and an input capacitance of 1100 pF maximum at 30V, it is suitable for efficient switching applications. The device supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. Power dissipation is rated at 2.5W (ambient) and 5W (case). Packaged in an 8-SOIC (0.154" width) for surface mounting, this component operates across a temperature range of -55°C to 150°C. It finds application in power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 30 V |
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