SI4435BDY-T1-E3
MOSFET P-CH 30V 7A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4435BDY-T1-E3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 7A at 25°C ambient temperature, with a maximum power dissipation of 1.5W (Ta). The Rds(on) is specified at a maximum of 20mOhm at 9.1A and 10V Vgs. It operates with a gate-source voltage range of ±20V, and a threshold voltage (Vgs(th)) of 3V at 250µA. The device offers a gate charge (Qg) of 70 nC at 10V. Packaged in an 8-SOIC (0.154", 3.90mm width) for surface mounting, this MOSFET is suitable for applications in industrial and automotive sectors. It is supplied on a Tape & Reel (TR) for automated assembly and operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 9.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
