SI4434ADY-T1-GE3
MOSFET N-CH 250V 2.8A/4.1A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix ThunderFET® SI4434ADY-T1-GE3 is an N-Channel MOSFET designed for demanding applications. This component features a 250V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 2.8A at ambient temperature (Ta) and 4.1A at case temperature (Tc). The device offers a low on-resistance of 150mOhm maximum at 2.8A and 10V gate-source voltage. With a maximum power dissipation of 2.9W (Ta) and 6W (Tc), it is suitable for thermal management considerations. Key parameters include a gate charge (Qg) of 16.5 nC maximum at 10V and input capacitance (Ciss) of 600 pF maximum at 125V. The SI4434ADY-T1-GE3 utilizes surface mount technology within an 8-SOIC package, operating across a temperature range of -55°C to 150°C. This MOSFET finds application in power switching and motor control systems.
Additional Information
Series: ThunderFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta), 4.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.9W (Ta), 6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 125 V |
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