SI4431BDY-T1-GE3
MOSFET P-CH 30V 5.7A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4431BDY-T1-GE3 is a P-Channel TrenchFET® MOSFET designed for high-efficiency power management applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) capability of 5.7A at 25°C. The Rds(on) is specified at a maximum of 30mOhm at 7.5A and 10V Vgs, ensuring low conduction losses. With a gate charge (Qg) of 20nC at 5V Vgs, it offers efficient switching characteristics. The device is housed in an 8-SOIC package for surface mounting, with a maximum power dissipation of 1.5W (Ta). Operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for use in industries such as automotive, industrial, and consumer electronics where robust power switching is required.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
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