SI4427BDY-T1-E3
MOSFET P-CH 30V 9.7A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® P-Channel Power MOSFET, part number SI4427BDY-T1-E3. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 9.7A at 25°C (Ta), with a maximum power dissipation of 1.5W (Ta). The low on-resistance is specified as 10.5mOhm @ 12.6A, 10V, and it supports gate drive voltages from 2.5V to 10V, with a maximum gate-source voltage of ±12V. The threshold voltage (Vgs(th)) is a maximum of 1.4V at 250µA. This MOSFET is available in an 8-SOIC package designed for surface mounting and operates across a temperature range of -55°C to 150°C (TJ). It is supplied in tape and reel packaging. This component finds application in power management solutions across various industries, including automotive and industrial electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 12.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 4.5 V |
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