SI4426DY-T1-E3
MOSFET N-CH 20V 6.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SI4426DY-T1-E3 is an N-Channel TrenchFET® power MOSFET designed for efficient power switching applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 6.5A at 25°C ambient temperature, with a maximum power dissipation of 1.5W. The on-resistance is rated at a maximum of 25mOhm at 8.5A drain current and 4.5V gate-source voltage, optimized for low conduction losses. It operates with a gate drive range of 2.5V to 4.5V for minimum on-resistance. The maximum gate charge (Qg) is 50 nC at 4.5V Vgs. This component is housed in an 8-SOIC package suitable for surface mounting and is supplied in tape and reel packaging. The operating temperature range is from -55°C to 150°C. Applications for this MOSFET include power management, battery charging, and general-purpose switching in consumer electronics and industrial equipment.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 8.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V |
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