SI4425BDY-T1-GE3
MOSFET P-CH 30V 8.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel MOSFET, TrenchFET® series, part number SI4425BDY-T1-GE3. This surface mount device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8.8A at 25°C. The low on-resistance of 12mOhm at 11.4A and 10V Vgs, combined with efficient switching characteristics, makes it suitable for power management applications. The device operates within a temperature range of -55°C to 150°C (TJ) and is packaged in an 8-SOIC (0.154", 3.90mm width) for tape and reel distribution. Key specifications include a maximum gate charge (Qg) of 100 nC at 10V and a maximum gate-source voltage of ±20V. This component finds application in industrial and automotive sectors requiring robust power switching.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 11.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
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