SI4423DY-T1-GE3
MOSFET P-CH 20V 10A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix P-Channel TrenchFET® MOSFET, part number SI4423DY-T1-GE3, is a surface-mount device in an 8-SOIC package. This component features a Drain to Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 10 A at 25°C (Ta). The Rds On is specified at a maximum of 7.5mOhm at 14A and 4.5V, with drive voltages ranging from 1.8V to 4.5V. Maximum power dissipation is 1.5W (Ta). The operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 14A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 600µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 5 V |
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