SI4421DY-T1-GE3
MOSFET P-CH 20V 10A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4421DY-T1-GE3 TrenchFET® P-Channel Power MOSFET. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 10A at 25°C, with a maximum power dissipation of 1.5W. The Rds(On) is specified at 8.75mOhm at 14A and 4.5V Vgs. Gate charge (Qg) is a maximum of 125 nC at 4.5V Vgs, and the threshold voltage (Vgs(th)) is a maximum of 800mV at 850µA. It supports gate-source voltages up to ±8V. This surface-mount component is housed in an 8-SOIC package and operates across a temperature range of -55°C to 150°C. The SI4421DY-T1-GE3 is supplied on tape and reel and finds application in power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.75mOhm @ 14A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 800mV @ 850µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 125 nC @ 4.5 V |
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