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SI4418DY-T1-E3

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SI4418DY-T1-E3

MOSFET N-CH 200V 2.3A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix MOSFET N-Channel TrenchFET® SI4418DY-T1-E3. This device features a drain-to-source voltage of 200 V and a continuous drain current of 2.3 A at 25°C, with a maximum power dissipation of 1.5 W. The N-Channel MOSFET is configured in a surface mount 8-SOIC package, offering a low on-resistance of 130 mOhm at 3 A and 10 V. Gate charge is rated at a maximum of 30 nC at 10 V, with a gate-source voltage tolerance up to ±20V. Operating temperature range is -55°C to 150°C. This component is commonly utilized in industrial and power control applications.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Rds On (Max) @ Id, Vgs130mOhm @ 3A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V

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