SI4413ADY-T1-GE3
MOSFET P-CH 30V 10.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SI4413ADY-T1-GE3 is a P-Channel TrenchFET® power MOSFET designed for efficient power management applications. Featuring a Drain-to-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Idss) of 10.5 A at 25°C, this component offers a low on-resistance of 7.5 mOhm at 13 A and 10 V Vgs. The device operates with a gate-source voltage range of ±20 V, and its threshold voltage (Vgs(th)) is 3 V at 250 µA. With a maximum power dissipation of 1.5 W at 25°C and a junction temperature range of -55°C to 150°C, it is suitable for demanding environments. The SI4413ADY-T1-GE3 comes in an 8-SOIC package for surface mounting and is supplied on tape and reel. This MOSFET is commonly utilized in battery management systems, power supplies, and motor control circuits across various industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 5 V |
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