SI4413ADY-T1-E3
MOSFET P-CH 30V 10.5A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI4413ADY-T1-E3, offers a 30V drain-to-source voltage with a continuous drain current of 10.5A at 25°C. This surface mount component, housed in an 8-SOIC package, features a low on-resistance of 7.5mOhm at 13A and 10V Vgs. With a gate charge of 95nC maximum at 5V Vgs and a maximum power dissipation of 1.5W, it is suitable for applications requiring efficient power switching. The device operates across a temperature range of -55°C to 150°C. This component finds application in various industrial sectors, including automotive and consumer electronics. It is supplied in tape and reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 5 V |
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