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SI4413ADY-T1-E3

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SI4413ADY-T1-E3

MOSFET P-CH 30V 10.5A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® P-Channel MOSFET, part number SI4413ADY-T1-E3, offers a 30V drain-to-source voltage with a continuous drain current of 10.5A at 25°C. This surface mount component, housed in an 8-SOIC package, features a low on-resistance of 7.5mOhm at 13A and 10V Vgs. With a gate charge of 95nC maximum at 5V Vgs and a maximum power dissipation of 1.5W, it is suitable for applications requiring efficient power switching. The device operates across a temperature range of -55°C to 150°C. This component finds application in various industrial sectors, including automotive and consumer electronics. It is supplied in tape and reel packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10.5A (Ta)
Rds On (Max) @ Id, Vgs7.5mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 5 V

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