SI4412ADY-T1-GE3
MOSFET N-CH 30V 5.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SI4412ADY-T1-GE3 is an N-Channel TrenchFET® power MOSFET. This device features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.8 A at 25°C ambient temperature. The Rds(on) is specified at a maximum of 24 mOhm at 8 A drain current and 10 V gate-source voltage. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) and is supplied on tape and reel. Key parameters include a gate charge (Qg) of 20 nC at 10 V Vgs and a maximum power dissipation of 1.3 W (Ta). This component is suitable for applications requiring efficient switching and power control in the automotive and industrial sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
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