SI4412ADY-T1-E3
MOSFET N-CH 30V 5.8A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SI4412ADY-T1-E3 is an N-channel Power MOSFET designed for efficient power management applications. This device features a 30 V drain-source voltage and a continuous drain current of 5.8 A at 25°C, with a maximum power dissipation of 1.3 W (Ta). The Rds On is specified at a maximum of 24 mOhm at 8 A and 10 V gate-source voltage, ensuring low conduction losses. The MOSFET utilizes a 4.5V to 10V drive voltage range and has a typical gate charge of 20 nC at 10 V. The SI4412ADY-T1-E3 is housed in a standard 8-SOIC package and is supplied on tape and reel. Its robust design and performance characteristics make it suitable for use in automotive, industrial, and consumer electronics systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
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