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SI4411DY-T1-GE3

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SI4411DY-T1-GE3

MOSFET P-CH 30V 9A 8SO

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® Series P-Channel Power MOSFET, part number SI4411DY-T1-GE3. This device features a 30V drain-to-source voltage and a continuous drain current capability of 9A at 25°C. Designed for efficient power switching, it offers a low on-resistance of 10mOhm maximum at 13A and 10V Vgs. The gate charge is specified at 65 nC maximum at 5V Vgs. The MOSFET is housed in an 8-SOIC package for surface mounting and supports a wide operating temperature range from -55°C to 150°C. Drive voltages are specified between 4.5V and 10V for optimal Rds(on) performance. The maximum gate-source voltage is ±20V. This component is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Rds On (Max) @ Id, Vgs10mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SOIC
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 5 V

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