SI4411DY-T1-GE3
MOSFET P-CH 30V 9A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® Series P-Channel Power MOSFET, part number SI4411DY-T1-GE3. This device features a 30V drain-to-source voltage and a continuous drain current capability of 9A at 25°C. Designed for efficient power switching, it offers a low on-resistance of 10mOhm maximum at 13A and 10V Vgs. The gate charge is specified at 65 nC maximum at 5V Vgs. The MOSFET is housed in an 8-SOIC package for surface mounting and supports a wide operating temperature range from -55°C to 150°C. Drive voltages are specified between 4.5V and 10V for optimal Rds(on) performance. The maximum gate-source voltage is ±20V. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 5 V |
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